Beschrijving
Power transistor
plaats van herkomst
Guangdong, China
Supplier Type
Originele fabrikant, Odm, Agentschap, Winkelier, Other
Media Beschikbaar
Datasheet, Foto, EDA/CAD Modellen, Other
Huidige-Collector (Ic) (Max)
Standard
Voltage-Collector Emitter Afbraak (Max)
Standard
Vce Verzadiging (Max) @ Ib, Ic
Standard
Huidige-Collector Cutoff (Max)
Standard
DC Stroom Gain (hFE) (Min) @ Ic, Vce
Standard
Frequentie-Overgang
Standard
Weerstand-Base (R1)
Standard
Weerstand-Emitter Base (R2)
Standard
Afvoer naar Bron Voltage (Vdss)
Standard
Huidige-Continue Drain (Id) @ 25 °C
Standard
Rds Op (Max) @ Id, Vgs
Standard
Vgs (th) (Max) @ Id
Standard
Gate Lading (Qg) (Max) @ Vgs
Standard
Input Capaciteit (Ciss) (Max) @ Vds
Standard
Huidige Rating (Amps)
Standard
Drive Voltage (Max Rds Op, Min Rds Op)
Standard
Vce (op) (Max) @ Vge, Ic
Standard
Input Capaciteit (Cies) @ Vce
Standard
Voltage-Afbraak (V (BR) GSS)
Standard
Huidige-Drain (Idss) @ Vds (Vgs = 0)
Standard
Huidige Drain (Id)-Max
Standard
-Voltage Cutoff (VGS off) @ Id
Standard
Weerstand-RDS (On)
Standard
Voltage-Offset (Vt)
Standard
Huidige-Gate Anode Lekkage (Igao)
Standard
Huidige-Vallei (Iv)
Standard
Toepassingen
GENERAL PURPOSE
Transistor Type
N-Channel JFET
Moisture Sensitivity Level (MSL)
3 (168 Hours)
packing
Tray, Reel, Packing foam, Box
Payment Ways
TT \ VISA \ MoneyGram \ PAYPAL \ Escrow
